Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7A) , L1116
- https://doi.org/10.1143/jjap.26.l1116
Abstract
Electron paramagnetic resonance measurements have been carried out on oxygen-implanted silicon at room temperatures. The EPR spectra composed of three isotropic lines are observed for the ion-dose range between 2×1017and 1.8×1018cm-2. They are ascribed to the dangling bonds in amorphous Si, to the defects in SiO2and to defects at the Si/SiO2interface. The EPR spectra ascribed to the defects in the Si/SiO2interface are found to differ from those arising from the Pb centre and from the defects at the Si/SiO2interface formed by oxygen ion implantation at high temperature.Keywords
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