Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor

This publication has 38 references indexed in Scilit:

• On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay
  Applied Physics Letters, 1995
• 0.1 /spl mu/m Schottky-collector AlAs/GaAs resonant tunneling diodes
  IEEE Electron Device Letters, 1994
• 500-GHz characterization of an optoelectronic S-parameter test structure
  IEEE Microwave and Guided Wave Letters, 1994
• Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current
  Physical Review Letters, 1993
• Coherent transistor
  IEEE Transactions on Electron Devices, 1993
• Electro-optic sampling and carrier dynamics at zero propagation distance
  Applied Physics Letters, 1992
• Picosecond large-signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor
  Applied Physics Letters, 1992
• Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width
  Applied Physics Letters, 1992
• Optoelectronic transient characterization of ultrafast devices
  IEEE Journal of Quantum Electronics, 1992
• Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
  Applied Physics Letters, 1991