Effect of edges on the reliability of GaAs and (AlGa) as heterojunction leds
- 1 September 1977
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 6 (5) , 467-481
- https://doi.org/10.1007/bf02672228
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974
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- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Strain-induced degradation of GaAs injection lasersApplied Physics Letters, 1973
- Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972
- Permanent degradation of GaAs tunnel diodesSolid-State Electronics, 1964