Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition
- 1 October 1999
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 14 (10) , 4051-4061
- https://doi.org/10.1557/jmr.1999.0547
Abstract
Failures in aluminum interconnects in display control devices are often caused by the formation of hillocks during postdeposition annealing. Ion-beam-assisted deposition was used to create a (110) out-of-plane texture in aluminum films to suppress hillocking. X-ray diffraction was used to quantify the (110)/(111) out-of-plane texture ratio, and scanning electron microscopy and atomic force microscopy were used to characterize the surface topology. Results show that no hillocks were observed on (110)-textured aluminum films following annealing for 30 min at 450 °C. Following annealing, the resistivity of the films made by ion-beam-assisted deposition recovered to within a factor of 2 of the physical-vapor-deposition films. Results show that ion-beam-assisted deposition can effectiv09ely modify the aluminum out-of-plane texture in such a way that hillock suppression can be achieved without significant change in resistivity.Keywords
This publication has 9 references indexed in Scilit:
- Microstructure and mechanical properties of IBAD niobium films on sapphire substratesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- The effect of grain orientation on the relaxation of thermomechanical stress and hillock growth in AI-1%Si conductor layers on silicon substratesJournal of Electronic Materials, 1993
- Microstructural investigations on titanium nitride films formed by medium energy ion beam assisted depositionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Effects of grain orientation on hillock formation and grain growth in aluminum films on silicon substratesScripta Metallurgica et Materialia, 1992
- Control of thin film orientation by glancing angle ion bombardment during growthJournal of Vacuum Science & Technology A, 1986
- Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2Journal of Applied Physics, 1985
- Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO2: Implant angle dependenceApplied Physics Letters, 1985
- Sputtering yield measurementsPublished by Springer Nature ,1981
- Hillock Growth and Stress Relief in Sputtered Au FilmsJournal of Applied Physics, 1969