Hole trapping during low gate bias, high drain bias hot-carrier injection in n-MOSFETs at 77 K
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (4) , 851-857
- https://doi.org/10.1109/16.127475
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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