Effects of impurities on the interface of ion beam sputtered tungsten with silicon
- 1 November 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 53, 82-86
- https://doi.org/10.1016/0169-4332(91)90246-g
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- An experimental study of the influence of oxygen on silicide formation with tungsten deposited from tungsten hexafluorideJournal of Applied Physics, 1991
- Ion beam sputtering deposition of tungsten: Energy and mass effects of primary ionsApplied Surface Science, 1989
- Comparison of the diffusion barrier properties of tungsten films prepared by hydrogen and silicon reduction of tungsten hexafluorideThin Solid Films, 1989
- Interface formation of W evaporated on Si(111) (7 × 7)Surface Science, 1986
- Spectroscopic investigation of the early formation stage of the Si(111)(2 × 1)-Mo interfaceSurface Science, 1986
- Influence of oxygen on the formation of refractory metal silicidesThin Solid Films, 1986
- In situ Auger electron spectroscopy investigation of the chemical bonding of ion-beam-deposited silicon nitrideThin Solid Films, 1986
- Impurity effects in transition metal silicidesJournal of Vacuum Science & Technology B, 1984
- Silicide and Schottky barrier formation in the Ti-Si and the Ti-SiOx -Si systemsJournal of Applied Physics, 1982
- Impurity effects in molybdenum silicide formationThin Solid Films, 1982