Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions
- 6 September 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (10) , 1366-1368
- https://doi.org/10.1063/1.109678
Abstract
We report the observation of a new type of intrinsic defect in n‐In0.5Ga0.5P which can be generated by recombination enhanced defect reaction (REDR) mechanism. It is observed that the increases of the concentrations of this defect and of another native defect due to REDR have nearly linear time dependence before saturation. This observation and other experimental results suggest that the two observed defects are complex defects. Other electrical properties of these defects such as alloy broadening effect on the thermal ionization energy are also described.Keywords
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