Absolute absorption coefficients of ZnTe single crystal layers: Experiment and theory
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 718-721
- https://doi.org/10.1016/0022-0248(90)91066-y
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSbJournal of Crystal Growth, 1990
- Zn1−xMnxTe fundamental reflectivity spectra in the 0.5–10.0 eV energy rangeSolid State Communications, 1989
- The temperature dependence (4.2 to 293 K) of the resonance energies of excitonic transitions in II–VI compoundsPhysica Status Solidi (b), 1986
- Coherent and incoherent reflection and transmission of multilayer structuresApplied Physics B Laser and Optics, 1986
- Determining refractive index and thickness of thin films from wavelength measurements onlyJournal of the Optical Society of America A, 1985
- Comments on the determination of the absorption coefficient of thin semiconductor filmsThin Solid Films, 1985
- Determination of surface roughness and optical constants of inhomogeneous amorphous silicon filmsJournal of Physics E: Scientific Instruments, 1984
- An improved technique for selective etching of GaAs and Ga1−xAlxAsJournal of Applied Physics, 1980
- Band parameters of CdS and CdSe single crystals determined from optical exciton spectraPhysica Status Solidi (b), 1979
- Refractive Index of ZnSe, ZnTe, and CdTeJournal of Applied Physics, 1964