Minority-carrier lifetime reduction in the initial degradation of long-life AlxGa1−xAs-GaAs lasers
- 15 June 1977
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (12) , 642-643
- https://doi.org/10.1063/1.89268
Abstract
The degradation of cw double‐heterostructure semiconductor lasers is analyzed. It is clearly shown that the recoverable initial degradation mode of long‐life AlxGa1−xAs‐GaAs lasers is caused by a reduction of minority‐carrier lifetime, the effect of which is readily distinguished from other possible processes such as increased cavity loss or minority‐carrier leakage.Keywords
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