Luminescence from stacking faults in 4H SiC
- 10 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (24) , 3944-3946
- https://doi.org/10.1063/1.1425084
Abstract
A previously unreported photoluminescence spectrum observed in certain 4H SiC bipolar diodes after extended forward voltage operation is reported. We assign this emission to exciton recombination at local potential fluctuations caused by stacking faults, which are created during operation of the diodes. Possible recombination mechanisms responsible for the spectrum are discussed.Keywords
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