High-frequency performance of diamond field-effect transistor
- 1 August 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (8) , 390-392
- https://doi.org/10.1109/55.936353
Abstract
The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at V/sub GS/=-1.5 V and V/sub DS/=-5 V,for which a cutoff frequency f T and a maximum oscillating frequency f max of 2.2 GHz and 7 GHz were obtained, respectively.Keywords
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