Dual work function metal gates using full nickel silicidation of doped poly-Si
- 29 September 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (10) , 631-633
- https://doi.org/10.1109/led.2003.817372
Abstract
This paper investigates the work function adjustment on fully silicided (FUSI) NiSi metal gates for dual-gate CMOS, and how it is effected by the poly-Si dopants. By comparing FUSI on As-, B-, and undoped poly-Si using the same p-Si substrates, it is shown that both As and B influence the work function of NiSi FUSI gate significantly, with As showing more effects than B possibly due to more As pile-up at the NiSi-SiO/sub 2/ interface. No degradations on the underlying gate dielectrics are observed in terms of interface state density (D/sub it/), fixed oxide charges, leakage current, and breakdown voltage, suggesting that NiSi FUSI is compatible with dual-gate CMOS processing.Keywords
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