Redistribution of dopant arsenic during silicide formation
- 15 August 1985
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (4) , 1505-1514
- https://doi.org/10.1063/1.336084
Abstract
A systematic study of arsenic redistribution in Ni, Cr, Ta silicide forming systems has been performed by implanting arsenic into metal layers or into single-crystal silicon substrates. During silicide formation arsenic accumulates near the interface region, incorporates in the silicide, or diffuses out of the silicide into the surrounding ambient. Differences in the dopant redistribution are related to the arsenic initial location relative to the moving species in silicide formation and the diffusivity of dopant atoms at the metal-silicon reaction temperature.This publication has 16 references indexed in Scilit:
- Effects of arsenic ion irradiation on Ti silicide formationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Low-temperature redistribution of As in Si during Ni silicide formationJournal of Applied Physics, 1984
- Dopant redistribution in silicides: Materials and process issuesJournal of Vacuum Science & Technology B, 1984
- Arsenic out-diffusion during TiSi2 formationApplied Physics Letters, 1984
- Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formationPhysical Review B, 1984
- Atomic motion of dopant during interfacial silicide formationThin Solid Films, 1983
- Platinum silicide ohmic contacts to shallow junctions in siliconJournal of Applied Physics, 1982
- Redistribution of As during Pd2Si formation: Ion channeling measurementsJournal of Applied Physics, 1982
- Low-temperature redistribution of As in Si during Pd2Si formationApplied Physics Letters, 1981
- The redistribution of implanted dopants after metal-silicide formationJournal of Applied Physics, 1978