Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1471-1474
- https://doi.org/10.1116/1.589968
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structuresJournal of Applied Physics, 1997
- Conversion of step configuration induced by strain in Si1−xGex layers deposited on vicinal Si(001) surfaceApplied Physics Letters, 1996
- Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxyApplied Physics Letters, 1994
- Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed GexSi1−x/SiJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Initial growth process of GaAs on Ge substrate and pseudomorphic Si interlayerJournal of Crystal Growth, 1993
- Ge segregation and its suppression in GaAs epilayers grown on Ge(111) substrateApplied Physics Letters, 1992
- Gallium arsenide and other compound semiconductors on siliconJournal of Applied Physics, 1990
- GaAs/Ge/GaAs heterostructures by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: Its effect on the device electrical characteristicsJournal of Applied Physics, 1986
- Molecular beam epitaxial GaAs heteroface solar cell grown on GeApplied Physics Letters, 1980