Etching rate modification in silicon oxide by ion implantation and rapid thermal annealing
- 1 January 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 1367-1370
- https://doi.org/10.1016/0168-583x(93)90800-l
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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