Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm
- 6 January 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (2) , 167-169
- https://doi.org/10.1063/1.1536729
Abstract
We present a study on the time evolution of the electroluminescence (EL) spectra of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) under pulsed current pumping. The EL spectra peaks at 285 nm and 330 nm are found to result from recombination involving band-to-band and free carriers to deep acceptor level transitions. The 330 nm long-wavelength transitions to deep acceptor levels in the p-AlGaN layer as well as the nonradiative processes significantly influence the LED internal quantum efficiency.Keywords
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