Low-threshold room-temperature cw operation of (AlGaAs)m(GaAs)n superlattice quantum well lasers emitting at ∼680 nm
- 7 September 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (10) , 707-709
- https://doi.org/10.1063/1.98895
Abstract
Low cw threshold current of 45 mA and high differential quantum efficiency of 78% have been achieved at room temperature in an (Al0.6Ga0.4As)2(GaAs)2 superlattice quantum well laser emitting at 681 nm. The quantum well structure has been optimized to minimize the threshold current density at 680 nm. The new ridge‐waveguide structure with a current‐blocking supporting region is employed to reduce the thermal resistance.Keywords
This publication has 13 references indexed in Scilit:
- Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Low current threshold AlGaAs visible laser diodes with an (AlGaAs)m(GaAs)n superlattice quantum wellApplied Physics Letters, 1986
- Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layerApplied Physics Letters, 1986
- Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Room-temperature CW operation of AlGaInP double-heterostructure visible lasersElectronics Letters, 1985
- Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPEJapanese Journal of Applied Physics, 1985
- Room-temperature cw operation in the visible spectral range of 680–700 nm by AlGaAs double heterojunction lasersApplied Physics Letters, 1982
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982