High-power high-temperature operation of 0.98-μm S-SQW lasers with InGaAsP (Eg: 1.61 eV) barriers
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 255-256
- https://doi.org/10.1109/islc.1994.519360
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- 0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguidesIEEE Journal of Quantum Electronics, 1993
- 0.98 mu m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiberIEEE Journal of Quantum Electronics, 1993
- High-power operation of aluminum-free ( kappa =0.98 mu m) pump laser for erbium-doped fiber amplifierIEEE Photonics Technology Letters, 1993
- Advantages of InGaAsP separate confinement layer in 0.98 μm InGaAs/GaAs/InGaP strained DQW lasers for high power operation at high temperatureElectronics Letters, 1992