Fabrication of II–VI semiconductor quantum well structures in ZnCdSSe alloy systems
- 1 September 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 191 (1-2) , 57-70
- https://doi.org/10.1016/0921-4526(93)90178-9
Abstract
No abstract availableKeywords
This publication has 45 references indexed in Scilit:
- Fabrication of ZnCdSSe alloys by MOMBE and their applications for double-hetero and quantum-well structuresJournal of Crystal Growth, 1992
- Metalorganic Molecular Beam Epitaxy of Zn1-xCdxSySe1-y Quaternary Alloys on GaAs SubstrateJapanese Journal of Applied Physics, 1991
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn1-yCdySe/ZnSxSe1-xJapanese Journal of Applied Physics, 1991
- Near-Room-Temperature Photopumped Blue Lasers in ZnSxSe1-x/ZnSe Multilayer StructuresJapanese Journal of Applied Physics, 1990
- Strained- layer semiconductor superlatticesCritical Reviews in Solid State and Materials Sciences, 1990
- Linewidth of excitonic emission and Stark effect in a ZnSe–ZnS strained-layer superlatticeJournal of Vacuum Science & Technology B, 1989
- Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSbPhysical Review B, 1987
- Blue luminescence of a ZnSe-ZnS0.1Se0.9 strained-layer superlattice on a GaAs substrate grown by low-pressure organometallic vapor phase epitaxyApplied Physics Letters, 1985
- Wavelength‐modulated reflectivity spectra of ZnSe and ZnS from 2.5 to 8 eVPhysica Status Solidi (b), 1977
- Energy-gap variations in semiconductor alloysJournal of Physics C: Solid State Physics, 1974