Fabrication of ZnCdSSe alloys by MOMBE and their applications for double-hetero and quantum-well structures
- 2 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 527-531
- https://doi.org/10.1016/0022-0248(92)90807-u
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Metalorganic Molecular Beam Epitaxy of Zn1-xCdxSySe1-y Quaternary Alloys on GaAs SubstrateJapanese Journal of Applied Physics, 1991
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn0.80Cd0.20Se-ZnS0.08Se0.92 Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn1-yCdySe/ZnSxSe1-xJapanese Journal of Applied Physics, 1991
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- Properties of Zn1−xCdxS ternary and Zn1−xCdxS1−ySey quaternary thin films on GaAs grown by OMVPEJournal of Crystal Growth, 1991
- Near-Room-Temperature Photopumped Blue Lasers in ZnSxSe1-x/ZnSe Multilayer StructuresJapanese Journal of Applied Physics, 1990
- ODMR study of self-activated emission bands from ZnSxSe1-xmixed crystalsJournal of Physics C: Solid State Physics, 1985
- Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb SubstratesJapanese Journal of Applied Physics, 1980
- Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion ElectronegativityPhysical Review Letters, 1976
- Energy-gap variations in semiconductor alloysJournal of Physics C: Solid State Physics, 1974