Interfacial roughness in InAs/GaSb superlattices
- 20 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3476-3478
- https://doi.org/10.1063/1.111245
Abstract
Using high‐resolution transmission electron microscopy (HRTEM), we have studied InAs/GaSb superlattices grown by molecular beam epitaxy. Our HRTEM observations indicate that the apparent interface width is on the order of 1 monolayer for InSb‐like interfaces, and on the order of 2 monolayers for GaAs‐like interfaces. The combination of these results with x‐ray diffraction and Raman scattering measurements leads us to conclude that these interface widths are principally due to roughness rather than to interfacial diffusion.Keywords
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