Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6) , 2114-2120
- https://doi.org/10.1109/23.211410
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Direct experimental evidence for a dominant hole trapping center in SIMOX oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trapApplied Physics Letters, 1992
- Trapped-hole annealing and electron trapping in metal-oxide-semiconductor devicesApplied Physics Letters, 1992
- SIMOX with epitaxial silicon: point defects and positive chargeIEEE Transactions on Nuclear Science, 1991
- Electron spin resonance study of E' trapping centers in SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1991
- Time-dependent hole and electron trapping effects in SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1990
- Irradiation-induced ESR active defects in SIMOX structuresIEEE Transactions on Nuclear Science, 1990
- Oxygen vacancy model for the E1′ center in SiO2Solid State Communications, 1974
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IIJapanese Journal of Applied Physics, 1972
- Electron Spin Resonance in Neutron-Irradiated QuartzJournal of Applied Physics, 1961