GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology
- 1 January 1989
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT'sIEEE Electron Device Letters, 1987
- Ultrahigh-speed GaAs static frequency dividersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- MBE Grown GaAs MESFETs with ultra-high gmand fTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Backgating characteristics of MODFET structuresIEEE Electron Device Letters, 1985
- A source coupled FET logic—A new current-mode approach to GaAs logicsIEEE Transactions on Electron Devices, 1985
- Backgating in GaAs/(Al,Ga)As modulation-doped field-effect transistors and its reduction with a superlatticeApplied Physics Letters, 1984
- The effect of backgating on the design and performance of GaAs digital integrated circuitsIEEE Transactions on Electron Devices, 1982
- Proton isolation for GaAs integrated circuitsIEEE Transactions on Electron Devices, 1982
- Carrier injection and backgating effect in GaAs MESFET'sIEEE Electron Device Letters, 1982