Abruptness of InGaAs/InP heterointerface grown by liquid phase epitaxy
- 30 April 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 82 (4) , 584-588
- https://doi.org/10.1016/s0022-0248(87)80002-7
Abstract
No abstract availableKeywords
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