Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 16 (3) , 1316-1320
- https://doi.org/10.1116/1.581144
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Selective deposition of polycrystalline silicon thin films at low temperature by hot-wire chemical vapor depositionApplied Physics Letters, 1996
- Selective silicon epitaxy by photo-chemical vapor deposition at a very low temperature of 160°CJournal of Electronic Materials, 1995
- Substrate selective deposition and etching of silicon thin filmsJournal of Applied Physics, 1995
- Selective low pressure chemical vapour deposition epitaxy using silane only for advanced device applicationsMaterials Science and Technology, 1995
- Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1994
- The Selective Deposition of a Silicon Film on Hydrogenated Amorphous Silicon by Mercury Sensitized Photochemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Selective Deposition of Silicon by Mercury Sensitized Photochemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Selective Si epitaxial growth by plasma-enhanced chemical vapor deposition at very low temperatureApplied Physics Letters, 1992
- Low-temperature selective epitaxial growth of silicon at atmospheric pressureApplied Physics Letters, 1989
- Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2Journal of Applied Physics, 1989