0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz
- 1 April 1990
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 11 (1-4) , 69-72
- https://doi.org/10.1016/0167-9317(90)90075-5
Abstract
No abstract availableKeywords
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