Trench-gate base-resistance-controlled thyristors (UMOS-BRTs)
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (12) , 597-599
- https://doi.org/10.1109/55.192856
Abstract
Two base-resistance-controlled thyristor (BRT) structures with trench (UMOS) gate regions are described. A model for the maximum controllable current density for these devices is proposed and demonstrated to agree well with experimental results obtained on devices with 600-V forward-blocking capability.Keywords
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