MOS controlled current interruption as a turn off mechanism for thyristors
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°CSolid-State Electronics, 1994
- Analysis of n-channel MOS-controlled thyristorsIEEE Transactions on Electron Devices, 1991
- Characteristics of the emitter-switched thyristorIEEE Transactions on Electron Devices, 1991
- On the MOS depletion of a high-level-injection plasmaSolid-State Electronics, 1990
- The MOS depletion-mode thyristor: a new MOS-controlled bipolar power deviceIEEE Electron Device Letters, 1988
- MOS-Controlled thyristors—A new class of power devicesIEEE Transactions on Electron Devices, 1986