Growth and Characterization of Epitaxial Insulating CaF₂ON Si

This publication has 13 references indexed in Scilit:

• Growth of an epitaxial insulator-metal-semiconductor structure on Si by molecular beam epitaxy
  Applied Physics Letters, 1986
• Post‐Growth Annealing Treatments of Epitaxial CaF2 on Si(100)
  Journal of the Electrochemical Society, 1986
• Electron diffraction observation of epitaxial silicon grown on a CaF2/Si(100) structure
  Applied Physics Letters, 1985
• Use of a rapid anneal to improve CaF2:Si (100) epitaxy
  Applied Physics Letters, 1985
• Fabrication of metal-epitaxial insulator-semiconductor field-effect transistors using molecular beam epitaxy of CaF2 on Si
  Applied Physics Letters, 1984
• High resolution electron beam lithography on CaF2
  Applied Physics Letters, 1984
• Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures
  Japanese Journal of Applied Physics, 1983
• The Growth and Characterization of Epitaxial Fluoride Films on Semiconductors
  MRS Proceedings, 1983
• An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and silicon
  Thin Solid Films, 1982
• Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
  Applied Physics Letters, 1982