Depth-dependent native-defect-induced layer disordering in AlxGa1−xAs-GaAs quantum well heterostructures
- 16 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (3) , 262-264
- https://doi.org/10.1063/1.100984
Abstract
Photoluminescence measurements on annealed single‐well Alx Ga1−x As‐GaAs quantum well heterostructures demonstrate that layer disordering caused by native defects is strongly depth dependent. The depth‐dependent layer disordering, as well as the corresponding depth‐dependent net carrier concentration, is a consequence of the re‐equilibration of the V−Ga vacancy and the As+Ga antisite native defect concentrations via the crystal surface.Keywords
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