1 000 000 °C/s thin film electrical heater: In situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing
- 24 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (4) , 417-419
- https://doi.org/10.1063/1.111116
Abstract
We introduce a new technique for rapidly heating (106 °C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high‐current dc electrical pulse to a conductive substrate‐heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 103 to 106 °C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within ≊±10 °C during anneals at ≊105 °C/s. Phase transformations in the Ti‐Si system were also observed using in situ resistivity measurements during ETA at ≊104 °C.Keywords
This publication has 6 references indexed in Scilit:
- Nucleation and growth in the initial stage of metastable titanium disilicide formationJournal of Applied Physics, 1993
- Formation of TiSi2 During Rapid Thermal Annealing: In Situ Resistance Measurements at Heating Rates From 1°C/S to 100°C/S.MRS Proceedings, 1993
- Kinetic analysis of C49-TiSi2 and C54-TiSi2 formation at rapid thermal annealing ratesJournal of Applied Physics, 1992
- Formation of ultrashallow p+ layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealingApplied Physics Letters, 1991
- Ultrashallow, high doping of boron using molecular layer dopingApplied Physics Letters, 1990
- In-situ doping of silicon using the gas immersion laser doping (GILD) processApplied Surface Science, 1989