Dynamics and Energetics of Si Ad-dimers and Ad-dimer Clusters on Ge(100)
- 29 September 1997
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 79 (13) , 2494-2497
- https://doi.org/10.1103/physrevlett.79.2494
Abstract
The early stages of silicon heteroepitaxial growth on Ge(100) have been studied with scanning tunneling microscopy. Four different Si ad-dimer configurations as well as metastable strings of ad-dimers on Ge(100) have been experimentally identified using dual bias imaging. The metastable strings are aligned along 〈130〉 directions and play an important role in binding of Si atoms and nucleation of Si islands. Various dynamic events, such as the collapse of metastable strings into islands and diffusion events of ad-dimers both along and across substrate dimer rows, have been observedKeywords
This publication has 17 references indexed in Scilit:
- Evidence of Adsorbed Atom Pairing during Homoepitaxial Growth of SiliconPhysical Review Letters, 1995
- Energetics and Dynamics of Si Ad-Dimers on Si(001)Physical Review Letters, 1995
- Si Binding and Nucleation on Si(100)Physical Review Letters, 1995
- Reversal of Step Roughness on Ge-Covered Vicinal Si(001)Physical Review Letters, 1995
- An Atomic-Level View of Kinetic and Thermodynamic Influences in the Growth of Thin FilmsJapanese Journal of Applied Physics, 1993
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Epitaxial growth of silicon on Si(001) by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Growth and equilibrium structures in the epitaxy of Si on Si(001)Physical Review Letters, 1989
- Scanning-tunneling-microscopy study of single-domain Si(001) surfaces grown by molecular-beam epitaxyPhysical Review Letters, 1989
- Tunneling microscopy of Ge(001)Physical Review B, 1987