Low frequency noise in 6H-SiC MOSFET's
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (6) , 274-276
- https://doi.org/10.1109/55.790733
Abstract
The noise spectra for n-channel, depletion-mode MOSFETs fabricated in 6H-SiC material were measured from 1-10/sup 5/ Hz at room temperature. Devices were biased in the linear regime, where the noise spectra was found to be dependent upon the drain-to-source bias current density. At a drain-to-source current of 50 /spl mu/A for MOSFETs with a W/L of 400 /spl mu/m/4 /spl mu/m, the measured drain-to-source noise power spectral density was found to be A/(f/sup /spl lambda//), with A being 2.6/spl times/10/sup -12/ V/sup 2/, and /spl lambda/ being between 0.73 and 0.85, indicating a nonuniform spatial trap density skewed towards the oxide-semiconductor interface. The measured Hooge parameter (/spl alpha//sub H/) was 2/spl times/10/sup -5/. This letter represents the first reported noise characterization of 6H-SiC MOSFET's.Keywords
This publication has 12 references indexed in Scilit:
- Nature of the 1/f noise in 6H-SiCSemiconductor Science and Technology, 1994
- Monolithic NMOS digital integrated circuits in 6H-SiCIEEE Electron Device Letters, 1994
- Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiCIEEE Transactions on Electron Devices, 1994
- Performance limiting micropipe defects in silicon carbide wafersIEEE Electron Device Letters, 1994
- Noise as a diagnostic tool for quality and reliability of electronic devicesIEEE Transactions on Electron Devices, 1994
- 1/f noise and radiation effects in MOS devicesIEEE Transactions on Electron Devices, 1994
- Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistorsIEEE Transactions on Electron Devices, 1994
- 1/f noise sourcesIEEE Transactions on Electron Devices, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Observation of single-carrier space-charge-limited flow in nitrogen-doped α-silicon carbide. II. Electrical noiseJournal of Applied Physics, 1985