Thermoelectric properties of boron phosphide
- 31 October 1988
- journal article
- Published by Elsevier in Journal of the Less Common Metals
- Vol. 143 (1-2) , 159-165
- https://doi.org/10.1016/0022-5088(88)90040-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Schottky barrier diodes using thick, well-characterized boron phosphide wafersApplied Physics Letters, 1985
- Thermoelectric figure of merit of boron phosphideApplied Physics Letters, 1985
- Crystal growth of thick wafers of boron phosphideJournal of Crystal Growth, 1984
- High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor depositionApplied Physics Letters, 1984
- Measurement of thermophysical properties of metals and ceramics by the laser-flash methodInternational Journal of Thermophysics, 1984
- A high-temperature attachment for precise measurement of lattice parameters by Bond's method between room temperature and 1500KJournal of Physics E: Scientific Instruments, 1982
- Thermoelectric power of boron phosphide at high temperaturesPhysica Status Solidi (a), 1980
- Thermal Expansion Coefficient of Boron MonophosphideJapanese Journal of Applied Physics, 1976
- Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 systemJournal of Crystal Growth, 1974
- Crystals and Epitaxial Layers of Boron PhosphideJournal of Applied Physics, 1971