Quantum-confined Stark effect in strained GaInN quantum wells on sapphire (0 0 0 1)
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 616-620
- https://doi.org/10.1016/s0022-0248(98)00216-4
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Optical Properties of Strained AlGaN and GaInN on GaNJapanese Journal of Applied Physics, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- Determining the electric field in [111] strained-layer quantum wellsApplied Physics Letters, 1993
- CdS/CdSe intrinsic Stark superlatticesJournal of Applied Physics, 1992
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Piezoelectricity in iii‐v compounds with a phenomenological analysis of the piezoelectric effectPhysica Status Solidi (b), 1968