Suppressed diffusion of implanted boron in 4H–SiC
- 19 April 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2292-2294
- https://doi.org/10.1063/1.123828
Abstract
Transient-enhanced diffusion of boron (B) during anneals at 1700 °C is experimentally observed in B-implanted 4H–SiC samples. This enhanced diffusion can strongly be suppressed by coimplantation of carbon or by a preanneal at 900 °C. It is proposed that B in 4H–SiC diffuses via the kick-out mechanism with the assistance of silicon interstitials in analogy to the B diffusion in Si. From the Fickian diffusion tail into the undamaged bulk, the preexponential factor and the activation energy of the B diffusion coefficient are determined.
Keywords
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