Statistical 3D ‘atomistic’ simulation of decanano MOSFETs
- 29 February 2000
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 27 (2-3) , 215-227
- https://doi.org/10.1006/spmi.1999.0805
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Hierarchical approach to "atomistic" 3-D MOSFET simulationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1999
- Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation studyIEEE Transactions on Electron Devices, 1998
- Matching analysis of deposition defined 50-nm MOSFET'sIEEE Transactions on Electron Devices, 1998
- Threshold voltage mismatch in short-channel MOStransistorsElectronics Letters, 1994
- Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET'sIEEE Transactions on Electron Devices, 1994
- Influence of statistical dopant fluctuations on MOS transistors with deep submicron channel lengthsMicroelectronic Engineering, 1993
- Characterisation and modeling of mismatch in MOS transistors for precision analog designIEEE Journal of Solid-State Circuits, 1986
- Physical limits in digital electronicsProceedings of the IEEE, 1975
- Fundamental limitations in microelectronics—I. MOS technologySolid-State Electronics, 1972
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964