Radiation damage and recovery effects in p-type InSb
- 1 January 1981
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 59 (1-2) , 1-6
- https://doi.org/10.1080/00337578108244192
Abstract
P-type InSb (n h = 7.5 × 1019 m−3) has been irradiated with I-MeV electrons at 7 K followed by isochronal annealing between 80 and 346 K. Changes in carrier mobility and concentration have been monitored. Effects of compensation are elucidated as is the role of shallow defect levels.Keywords
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