Si/Ge Superlattices for Optical Applications: Possibilities, Problems, and Prospects
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Optical properties of short-period Si/Ge superlattices grown on (001) Ge studied with photoreflectancePublished by SPIE-Intl Soc Optical Eng ,1991
- Optical etalon effects and electronic structure in silicon-germanium 4 monolayer: 4 monolayer strained layer superlatticesSemiconductor Science and Technology, 1991
- Zachaiet al. replyPhysical Review Letters, 1990
- Electronic transitions in a SimGen strained monolayer superlattice measured by photoreflectanceApplied Physics Letters, 1990
- Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked EpitaxyJapanese Journal of Applied Physics, 1990
- Photoluminescence in short-period Si/Ge strained-layer superlatticesPhysical Review Letters, 1990
- Photoluminescence from Si/Ge superlatticesApplied Physics Letters, 1990
- Electronic structure of Ge/Si monolayer strained-layer superlatticesPhysical Review B, 1989
- Silicon/germanium strained layer superlatticesJournal of Crystal Growth, 1989
- Silicon-germanium alloys and heterostructures: Optical and electronic propertiesCritical Reviews in Solid State and Materials Sciences, 1989