Fabrication of GaAs photodiode using laser selective area epitaxy
- 28 January 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (4) , 388-390
- https://doi.org/10.1063/1.104643
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A criterion for the suppression of plastic deformation in laser-assisted chemical vapor deposition of GaAsJournal of Applied Physics, 1990
- GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsineApplied Physics Letters, 1989
- Low-temperature (250 °C) selective epitaxy of GaAs films and p-n junction by laser-assisted metalorganic chemical vapor depositionApplied Physics Letters, 1988
- AlGaAs multiple-wavelength light-emitting bar grown by laser-assisted metalorganic chemical vapor depositionApplied Physics Letters, 1988
- High-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxyApplied Physics Letters, 1988
- Low temperature selective epitaxy of III–V compounds by laser assisted chemical vapor depositionJournal of Crystal Growth, 1988
- Characteristics of laser metalorganic vapor-phase epitaxy in GaAsJournal of Applied Physics, 1986
- Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- Laser selective deposition of GaAs on SiApplied Physics Letters, 1986
- Planar monolithic integration of a photodiode and a GaAs preamplifierApplied Physics Letters, 1983