Structure and surface core level shifts of the GaAs(114)A and B surfaces
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 123-124, 43-47
- https://doi.org/10.1016/s0169-4332(97)00448-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Geometrical and electronic structure of the MBE-prepared GaAs(113)A surfaceSurface Science, 1997
- Flattening Transition on GaAs (411)A Surfaces Observed by Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 1995
- Evaluation of the highly coherent surface structure of the GaAs (411)A plane using scanning tunneling microscopyJournal of Crystal Growth, 1995
- Structures of As-Rich GaAs(001)-(2 × 4) ReconstructionsPhysical Review Letters, 1994
- Photoelectron spectroscopy study of Ga 3d and As 3d core levels on MBE-grown GaAs surfacesSurface Science, 1994
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1993
- Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structuresPhysical Review B, 1988
- Orientation-dependent surface core-level shifts and chemical shifts on clean and H2S-covered GaAsSurface Science, 1987
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987
- Core-level photoemission studies of MBE-grown semiconductor surfacesPhysica B+C, 1983