Air-gaps in 0.3 μm electrical interconnections
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (12) , 557-559
- https://doi.org/10.1109/55.887464
Abstract
A copper/air-gap interconnection structure using a sacrificial polymer and SiO/sub 2/ in a damascene process has been demonstrated. The air-gap occupies the entire intralevel volume with fully densified SiO/sub 2/ as the planar interlevel dielectric. The copper was deposited by physical vapor deposition and planarized by chemical-mechanical planarization. The Ta/Cu barrier/seed layer was deposited by physical vapor deposition; the bulk copper was electrochemically deposited. The resulting structure has an effective intralevel dielectric constant of 2.19.Keywords
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