Identification of defective CMOS devices using correlation and regression analysis of frequency domain transient signal data

Abstract
Transient Signal Analysis is a digital device testing methodthat is based on the analysis of voltage transients at multi-pletest points and on I DD switching transients on the sup-plyrails. We show that it is possible to identify defectivedevices by analyzing the transient signals produced at testpoints on paths not sensitized from the defect site. Thesmall signal variations produced at these test points areanalyzed in the frequency domain. Correlation analysisshows a high degree of correlation in these signals acrossthe outputs of defect-free devices. We use regression analy-sisto show the absence of correlation across the outputs ofbridging and open drain defective devices.

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