A physics-based short-channel current–voltage model for buried-channel MOSFETs

This publication has 21 references indexed in Scilit:

• Drain-induced barrier lowering in buried-channel MOSFET's
  IEEE Transactions on Electron Devices, 1993
• A Predictor/CAD Model for Buried-Channel MOS Transistors
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1987
• A new threshold-voltage model for small-geometry buried-channel MOSFETs
  Solid-State Electronics, 1985
• A Simulation Method to Completely Model the Various Transistor I-V Operational Modes of Long Channel Depletion MOSFET's
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
• Analysis of the depletion-mode MOSFET including diffusion and drift currents
  IEEE Transactions on Electron Devices, 1985
• Dependence of the threshold voltage on channel length in BC-mosfet's
  Solid-State Electronics, 1983
• Threshold and subthreshold characteristics theory for a very small buried-channel mosfet using a majority-carrier distribution model
  Solid-State Electronics, 1981
• Analysis and characterization of the depletion-mode IGFET
  IEEE Journal of Solid-State Circuits, 1980
• Modeling of an ion-implanted silicon-gate depletion-mode IGFET
  IEEE Transactions on Electron Devices, 1975
• Depletion-mode IGFET made by deep ion implantation
  IEEE Transactions on Electron Devices, 1973