Properties of high-Tc superconductors at RF and microwaves : experimental data and some model notions
- 1 January 1990
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 25 (3) , 255-263
- https://doi.org/10.1051/rphysap:01990002503025500
Abstract
In this paper we try to summarize experimental data on high-Tc superconductors (HTSC) behaviour in RF and microwave electromagnetic field accumulated to this day. The main emphasis is made on Y-Ba-Cu-O material for which the most complete information is available. We show that it is intergranular junctions that play an essential role in the formation of electromagnetic properties of the ceramics with p ≅ 10-4 Ω x m. We suggest a model of the HTSC single crystal where the charge carriers are tunneling « biholes » obeying the Bose statistics and are localized within a unit cell. This model can describe field penetration depth and critical current density as a functions of temperature as well as temperature and frequency dependence of surface resistance. The presence of normal conducting regions can be a course of HTSC single crystal residual resistance. A close agreement between experimental data and model calculations is demonstratedKeywords
This publication has 10 references indexed in Scilit:
- Theory of magneto-exciton binding energy in realistic quantum well structuresSolid State Communications, 1988
- Depth profile of vacancy-type defects in B+-implanted Si with a SiO2 overlayer by a variable-energy positron beamApplied Physics Letters, 1988
- Waveguide magneto-optic isolator fabricated by laser annealingApplied Physics Letters, 1988
- Dynamics of atoms in the high-temperature superconductor YBa2Cu3O7??Zeitschrift für Physik B Condensed Matter, 1988
- Self-consistent simulation of a parallel-plate rf dischargeApplied Physics Letters, 1988
- Variational Dirac-Hartree-Fock method: Results for the He, Be, C, and Ne isoelectronic sequencesPhysical Review A, 1988
- Variable-range hopping and the hall coefficient in Si:AsSolid State Communications, 1987
- Effect of deposition process on the thin-film ZnS/p-Si interfaceApplied Physics Letters, 1987
- Wideband variable peaking AGC amplifier for high-speed lightwave digital transmissionElectronics Letters, 1987
- Temperature dependence of planar channeling radiationPhysical Review B, 1987