Dynamic observation of Si crystal growth on a Si(111)7×7 surface by high-temperature scanning tunneling microscopy

Publisher Website
Google Scholar
Abstract
The dynamic process of Si crystal growth on a Si(111)7×7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7×7 surface, kept at 350 °C, and the crystal growth was observed. The step-flow growth was observed as the appearance of new adatoms at the step edge. The [112¯] steps became jagged with [1¯ 1¯ 2] steps. At the [1¯ 1¯ 2] steps, new adatoms appeared in rows along the step edges.