Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (5) , 511-514
- https://doi.org/10.1109/68.215265
Abstract
The authors report the first successful demonstration of a metal-semiconductor-metal photodetector (MSMPD) fabricated on low-temperature InGaAs grown on GaAs by molecular beam epitaxy (MBE) for long-wavelength fiber optic applications. Interdigitated MSMPDs with finger widths and spacings of 0.2, 0.5, 1.0, and 2.0 mu m were tested using a femtosecond pulsed laser and high-speed electrooptic sampling. A FWHM pulsed response of 2 and 1.3 ps was measured for low-temperature In/sub 0.25/Ga/sub 0.75/As and In/sub 0.35/Ga/sub 0.65/As, respectively. The latter is the fastest response reported to data for a photodetector capable of detection to wavelengths as long as 1.3 mu m.<>Keywords
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