Generation lifetime monitoring on high resistivity silicon using gated diodes
- 1 March 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 288 (1) , 48-53
- https://doi.org/10.1016/0168-9002(90)90462-f
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Gettering mechanisms in siliconJournal of Applied Physics, 1988
- Theoretical and practical investigation of the thermal generation in gate controlled diodesSolid-State Electronics, 1981
- On the analysis of pulsed MOS capacitance measurementSolid-State Electronics, 1978
- Effects of surface states on relaxation phenomena in MOS capacitorsSolid-State Electronics, 1976
- The gate-controlled diode s0 measurement and steady-state lateral current flow in deeply depleted MOS structuresSolid-State Electronics, 1974
- Interpretation of surface and bulk effects using the pulsed MIS capacitorSolid-State Electronics, 1971
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952