Junction Formation in Silicon by Rapid Thermal Annealing
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Material and electrical properties of ultra-shallow p/sup +/-n junctions formed by low-energy ion implantation and rapid thermal annealingIEEE Transactions on Electron Devices, 1991
- Diffusion of boron in silicon during post-implantation annealingJournal of Applied Physics, 1991
- Damage removal/dopant diffusion tradeoffs in ultra-shallow implanted p/sup +/-n junctionsIEEE Transactions on Electron Devices, 1990
- Rapid thermal processing, an integral part of shallow junction formationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Optimization of the germanium preamorphization conditions for shallow-junction formationIEEE Transactions on Electron Devices, 1988
- Diffusion of B and As from polycrystalline silicon during rapid optical annealingJournal of Applied Physics, 1987
- Some aspects of damage annealing in ion-implanted silicon: Discussion in terms of dopant anomalous diffusionJournal of Applied Physics, 1987
- Transient enhanced diffusion of dopants in silicon induced by implantation damageApplied Physics Letters, 1986
- Formation of Shallow P+ Junctions Using Two-Step AnnealsMRS Proceedings, 1984
- Rapid thermal annealing of BF2+implanted, preamorphized siliconIEEE Electron Device Letters, 1983