The optoelectronic properties of a-Si, Ge:H(F) alloys

This publication has 28 references indexed in Scilit:

• Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys
  Journal of Applied Physics, 1989
• The role of dangling bonds in the transport and recombination of a-Si:Ge: H alloys
  Philosophical Magazine Part B, 1987
• Electron and hole transport in a-Si1−xGex:H alloys
  Journal of Applied Physics, 1986
• Electronic States In Glow-Discharge a-SiGe_x:H:(F) Alloys
  Japanese Journal of Applied Physics, 1986
• Urbach tail and gap states in hydrogenated a-SiC and a-SiGe alloys
  Solid State Communications, 1985
• Structural, electrical, and optical properties of a-${\mathrm{Si}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Ge}}_{\mathrm{x}}$:H and an inferred electronic band structure
  Physical Review B, 1985
• Electron-spin-resonance study of boron-doped amorphousSixGe1−x: H alloys
  Physical Review B, 1984
• Gap state distribution of hydrogenated amorphous silicon-germanium alloys
  Journal of Non-Crystalline Solids, 1984
• Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow discharge
  Solid State Communications, 1977
• Properties of glow-discharge deposited amorphous germanium and silicon
  Journal of Non-Crystalline Solids, 1970